We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers.
H.-S. Philip Wong and Sayeef Salahuddin
New non-volatile memory devices store information using different physical mechanisms from those
employed in today’s memories and could achieve substantial improvements in computing performance
and energy efficiency
Andrew D. Kent and Daniel C. Worledge
Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper
information storage
We further quantify accuracy drop due to analog computation and MTJ process variations for LeNet-300-100 on MNIST dataset and a 9-layer
CNN on CIFAR-10 dataset and find it to be within $0.5%$ and $1%$, respectively.
This article explores the current state of solid-state memory, including what is publicly known about the Intel/Micron XPoint memory and the future consumer devices and technologies that nonvolatile memory will make possible.
STT-RAM or other spin-based MRAM technologies could be very attractive nonvolatile candidates to replace SRAM, and possibly DRAM, because of their high read and write performance as well as high endurance. The spin-based MRAM devices are also generally configured with a crossbar memory architecture with word- and bit-line memory-cell selection.
## 2019 [Memory devices and applications for in-memory computing](https://knowen-production.s3.amazonaws.com/uploads/attachment/file/5270/10.1038_s41565-020-0655-z.pdf) Abu Sebastian
febr 2021 [HiPEAC21 - Keynote by Evangelos Eleftheriou: "In-memory Computing for AI Applications"](https://www.youtube.com/watch?v=30K5i8bdiyg)
## 2014 K.Ando [Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)](https://aip.scitation.org/doi/full/10.1063/1.4869828?TRACKPRESS=BARDI)
> We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers.
## 2015 wong [Memory leads the way to better computing](https://knowen-production.s3.amazonaws.com/uploads/attachment/file/5265/wong2015.pdf)
> H.-S. Philip Wong and Sayeef Salahuddin
> New non-volatile memory devices store information using different physical mechanisms from those
> employed in today’s memories and could achieve substantial improvements in computing performance
> and energy efficiency
## 2015 kent [A new spin on magnetic memories](https://knowen-production.s3.amazonaws.com/uploads/attachment/file/5264/kent2015.pdf)
> Andrew D. Kent and Daniel C. Worledge
> Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper
> information storage
## 201x [Computing-in-Memory with Spintronics](http://www.ee.umn.edu/users/sachin/conf/date18.pdf) Shubham Jain, et al, Kaushik Roy
3 ARCHITECTURES
## ++++ [An MRAM-based Deep In-Memory Architecture for Deep Neural Networks](http://shanbhag.ece.illinois.edu/publications/ADP_ISCAS_MRAM_2019.pdf) Ameya D. Patil
> We further quantify accuracy drop due to analog computation and MTJ process variations for LeNet-300-100 on MNIST dataset and a 9-layer
> CNN on CIFAR-10 dataset and find it to be within $0.5%$ and $1%$, respectively.
- [IMFlexCom: Energy Efficient In-Memory Flexible Computing Using Dual-Mode SOT-MRAM](https://dl.acm.org/doi/pdf/10.1145/3223047) FARHANA PARVEEN
## 2020 [Spintronic devices for energy-efficient data storage and energy harvesting](https://www.nature.com/articles/s43246-020-0022-5) Jorge Puebla
## Tom Coughlin
https://www.forbes.com/sites/tomcoughlin/2020/06/04/advances-enable-36b-emerging-memory-market-by-2030/?sh=3182661f474f
- **2016!!!** not realized? [Crossing **the Chasm to New** Solid-State Storage Architectures](https://ieeexplore.ieee.org/document/7353293?denied=)
> This article explores the current state of solid-state memory, including what is publicly known about the **Intel/Micron XPoint memory and the future consumer devices and technologies that nonvolatile memory will make possible**.
> STT-RAM or other spin-based MRAM technologies could be very attractive nonvolatile candidates to replace SRAM, and possibly DRAM, **because of their high read and write performance as well as high endurance**. The spin-based MRAM devices are also generally configured with a crossbar memory architecture with word- and bit-line memory-cell selection.
- https://www.forbes.com/sites/tomcoughlin/2019/12/16/mram-in-perspective/?sh=636bfdb93cbe
2019 [EMERGING MEMORIES RAMP UP](https://tomcoughlin.com/wp-content/uploads/2019/06/2019-Emerging-Memory-Report-brochure.pdf)
https://tomcoughlin.com/wp-content/uploads/2019/06/
- [2017 Roadmap Mass Data Storage TWG](https://tomcoughlin.com/wp-content/uploads/2019/06/Digital-Storage-Technology-Roadmaps-and-Implications-for-Cloud-Computing-iNEMI-061317r.pdf)
